Excitonic effects on the silicon plasmon resonance.

نویسندگان

  • V Olevano
  • L Reining
چکیده

We present an ab initio calculation of the electron energy loss spectrum of silicon including local-field, self-energy, and excitonic effects. When self-energy corrections are added to the standard random phase approximation (RPA) the line shape of the plasmon resonance worsens. The electron-hole interaction cancels this correction and improves the result both compared to the RPA and to the self-energy one, yielding very good agreement between theory and experiment provided that the mixing of interband transitions of both positive and negative frequencies is included.

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عنوان ژورنال:
  • Physical review letters

دوره 86 26 Pt 1  شماره 

صفحات  -

تاریخ انتشار 2001